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High Current MOSFET Flip Flop with Debounced Pushbutton: (electronic schematic / circuit added 11/05) |
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High Frequency DC-DC Conversion using High Current Bipolar Transistors: Conversion upto 400kHz using Optimised Geometry Bipolar
Devices: Zetec Semiconductors Applications Notes A discussion of the switching capabilities of Bipolar transistors, including charge analysis and circuit techniques to permit
high frequency saturated switching. Circuit examples are presented to illustrate speed-up methods, and charts to demonstrate the resultant efficiency improvements. The report also includes
turn-off charge versus bias point characterisation charts, for typical high current low VCE(sat) Bipolar devices, targeted for low voltage and battery applications. (app note added
6/06) |
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High Power FM Microphone (FM Bug): (circuit / schematic design added 6/06) |
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High Voltage, High Efficiency MOSFET RF Amplifiers: Application Note Microsemi-formerly Advanced
Power Technology APT0001 ( app note added 05/07) |
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Highside Driver Feeds IGBTs and MOSFETs : 11/23/00 EDN-Design Ideas / (added 6/06) PDF contains multiple circuits scroll to
find this circuit. |
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Highside Driver Feeds IGBTs and MOSFETs: 11/23/00 EDN-Design Ideas / (added 6/06) |
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High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements: Application Note
Microsemi-formerly Advanced Power Technology APT9804_04 ( app note added 05/07) |
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HT04 Series: Supertex Semiconductors (app note added 2/06) |
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IC maintains uniform Bias for GaAs MESFETs: 08/22/02 EDN Design Ideas / (added 1/05) The gate-turn-on
threshold voltage for GaAs MESFETs (gallium-arsenide metal-semiconductor field-effect transistors) varies considerably from part to part, even within a given lot. That behavior makes biasing
difficult, especially if you want to design the device into a high-volume product. To overcome this drawback, you can introduce a current sensor that monitors the bias current and provides
...... |
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IGBT Technical Overview: Application Note Microsemi formerly Advanced Power APT0408 (added 05/07) |
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Improve FET based gain Control: 12/06/01 EDN Design Ideas / (added 1/05) One problem with standard FET
gain-control circuits is increased noise when you use the FET as a part of a resistive attenuator in series with an op amp. This configuration attenuates the signal before amplification;
hence, it requires much higher gain bandwidth and better noise performance from the op amp. ... |
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Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC: Application Note Microsemi formerly Advanced Power
APT0101 (added 05/07) |
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Improved Vbe Doubler: Unpublished Circuit is a compensated Vbe doubler which operates over a wide current range. (added
02/05) |
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Inrush limiter also provides short circuit protection: 06/09/05 EDN Design Ideas / (added 11/05) MOSFET keeps
inrush currents due to capacitive loads under control. |
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Introduction to Power MOSFETs and Their Applications: National Semiconductor Application Note (app note added
2/06) |
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Inverted Bipolar Transistor Doubles as a Signal Clamp: 06/07)/01 EDN-Design Ideas / (added 6/06) A number of circuits, such
as level detectors and AM demodulators, benefit from a rectifier with a low offset voltage. Silicon diodes have an offset of approximately 0.6V and do not work well in low-level circuitry. A
Schottky diode is a bit better... |
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Isolated MOSFET Driver has Wide duty cycle range: 04/29/04 EDN Design Ideas / (added 1/05) The main
application for the circuit in Figure 1 is for driving power MOSFETs with signals ranging in frequency from 1 Hz to 300 kHz and with duty cycles from 0 to 100%. You achieve this goal by using
a coreless pc-board transformer. The switching frequency in most power-electronics circuits ranges from a few hertz to a few hundred kilohertz.... |
