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H-BRIDGE Theory & Practice - A number of web sites talk about
H-bridges, they are a topic of great discussion in robotics clubs and they
are the bane of many robotics hobbyists. I periodically chime in on
discussions about them, and while not an expert by a long shot I've built a
few over the years. Further, they were one of my personal stumbling blocks
when I was first getting into robotics....[Chuck McManis] |
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High Current MOSFET Flip Flop with Debounced Pushbutton -
This circuit was adapted from the "Toggle Switch Debounced Pushbutton" by
John Lundgren. It is particularly useful in controlling a load from several
locations where the load may be switched on from one location and switched
off from another. Any number of momentary (N/O) switches or push buttons may
be connected in parallel. The circuit....(electronic schematic / circuit
added 11/05) |
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High Frequency DC-DC Conversion using High Current Bipolar Transistors:
Conversion upto 400kHz using Optimised Geometry Bipolar Devices -
Zetec Semiconductors Applications Notes A discussion of the switching
capabilities of Bipolar transistors, including charge analysis and circuit
techniques to permit high frequency saturated... |
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High Impedance JFET Buffers - I have used these circuits many times.
They are great when you need a low gain AC signal amplifier with a very high input
impedance. It is good to beyond 50MHz. …. [Designed by David A. Johnson] |
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High Power FM Microphone FM Bug - My FM Wireless Microphone has been a very
popular project with beginners and experienced constructors alike. It has been used
inside guitars and as the basis of a remote control system. …. [from Harry Lythall's
website] |
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High Voltage, High Efficiency MOSFET RF Amplifiers - Application Note
Microsemi-formerly Advanced Power Technology APT0001 ( app note added 05/07)
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High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier - Application Note
Microsemi formerly Advanced Power APT9501(added 05/07) |
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High-side driver feeds IGBTs and MOSFETs - 11/23/00 EDN-Design Ideas The
low- to moderate-power system in Figure 1 provides the interface between a pulse-width
modulator and a high-side IGBT (insulated-gatebipolar-transistor) or MOSFET switch.
You can use it to interface TTL or CMOS circuitry to an H-bridge.... [Design idea by
Carlisle Dolland, Honeywell Engines and Systems, Torrance, CA] |
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High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis & Reliability
Improvements - The benefits of soft-switching converters, and in particular
zero-voltage switching (ZVS, also called zerovoltage-transition [ZVT] or
resonant-transition) circuits, are well-known. High-frequency converters powered from
high source voltage show significant improvements when operated with soft switching.
Application Note Microsemi APT9804_04 ( app note added 4/08) |
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HT04 Series - Supertex Semiconductors (app note added 2/06)
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IC maintains uniform bias for GaAs MESFETs - 22-Aug-02 Issue of EDN
The gate-turn-on threshold voltage for GaAs MESFETs (gallium-arsenide
metal-semiconductor field-effect transistors] varies considerably from part to part,
even within a given lot. That behavior makes biasing difficult, especially if you want
to design the device into a high-volume product. To overcome this drawback, you can
introduce a current sensor that monitors the bias current and provides.... [Design
Idea by Ken Yang, Maxim Integrated Products, Sunnyvale, CA] |
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IGBT Technical Overview - Application Note Microsemi formerly Advanced Power
APT0408 (added 05/07) |
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Improve FET-based gain control - 6-Dec-01 Issue of EDN One problemwith
standard FET gain-control circuits is increased noise when you use the FET as a part
of a resistive attenuator in series with an op amp. This configuration
attenuates the signal before amplification; hence, it requires much higher gain
bandwidth and better noise performance from the op amp.... [Design Idea by Ron
Mancini, Texas Instruments, rmancini@ti.com] |
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Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC - This
paper charts the technological evolution of APT’s powerMOSFETs from the earliest
PowerMOS IV designs to the latest PowerMOS 7TM products. The improvement in
performance of a 3.5kW boost converter equipped in turn with different generation
products is evaluated,....( app note added 4/08) |
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Improved VBE Doubler - Circuit is a compensated Vbe doubler which operates
over a wide current range.… [Jim Haggerman, Hagerman Technology LLC] |
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Inrush limiter also provides short-circuit protection - 9-Jun-05 Issue of
EDN MOSFET keeps inrush currents due to capacitive loads under control....
[Design Idea by Ryan Brownlee, Process Automation Division, Pepperl & Fuchs Inc,
Twinsburg, OH; Edited by Brad Thompson and Fran Granville] |
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Introduction to Power MOSFETs & Their Applications - National Semiconductor
Application Note (app note added 2/06) |
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Isolated MOSFET driver has wide duty-cycle range - 29-Apr-04 Issue of EDN
The main application for the circuit in Figure 1 is for driving power MOSFETs with
signals ranging in frequency from 1 Hz to 300 kHz and with duty cycles from 0 to 100%.
You achieve this goal by using a coreless pc-board transformer. The switching
frequency in most power-electronics circuits ranges from a few hertz to a few hundred
kilohertz.... [Design Idea by Jesus Doval-Gandoy and Moises Pereira Martinez, ETSI
Industriales, Vigo, Spain] |
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Isolation MOSFET-driver IC
gets improved power efficiency at lighter loads - 8-Jan-09 Issue of EDN
An isolation driver with feedback boosts 5V to approximately 13V, reducing power
consumption.... [Design Idea by Marián Štofka, Slovak University of Technology,
Bratislava, Slovakia] |
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